SiC, GaN and PCIM Europe 2022

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Here is a selection of interesting news and technical articles on power electronics.

Also check News archive – Power electronics news and Archive of technical articles – Power Electronics News for a complete list of news and articles from our site.

CoolSiC MOSFET 1200 V M1H is a new CoolSiC technology from Infineon Technologies AG. Exquisite silicon carbide (SiC) The chip will be implemented in a wide range of products, including discrete packages using XT interconnection technology and the popular Easy series of modules.


New registered on https://www.powerelectronicsnews.com/register/ between April 20, 2022 and May 1, 2022 will take part in the draw to win one of 100 vouchers for a PCIM ticket. All winners will receive an email on May 3, 2022 with an invitation code to redeem their personalized ticket at www.pcim.de.

These tickets are also valid on the PCIM Europe 2022 digital event platform.

We look forward to seeing you at PCIM 2022 in Nuremberg.

You can find AspenCore @ booth 6-400.


You can find more news here: News archive – Power electronics news

IonQ and Hyundai Motor Company have teamed up to develop unique quantum eigensolver (VQE) variation approaches to study lithium compounds and chemical interactions in battery chemistry. VQE is an optimization algorithm that defines a set of values ‚Äč‚Äčthat will solve a specific optimization problem.


In the electronics industry, innovation in wide-band semiconductors has proven to be cost-effective and efficient compared to traditional silicon-based semiconductors. silicon carbide (SiC) semiconductors with a wide bandwidth are some of the most advanced semiconductors that have great relevance. These semiconductors work much well on various parameters such as high temperature, frequency, voltage and some others.


Gallium nitride (GaN) is a wide gap a semiconductor that supports increased demand in high-power and RF applications. With more than three times the bandwidth of conventional silicon, GaN allows power tools to operate at much higher temperatures and stresses than silicon without compromising or compromising its performance and reliability.


You can find more articles here: Archive of technical articles – Power Electronics News

SiC, GaN and PCIM Europe 2022

Source link SiC, GaN and PCIM Europe 2022